High-Speed InP Photodiodes
Designed for use in the next generation of 800G and 1.6T transceivers with 200 Gb/s PAM4 optical lanes, the high-speed photodiodes provide major advancements in reliability and performance for data center applications.
1X4 Photodiode Arrays for NRZ or PAM4
Use these 13XX nm photodiode array chips in pluggable transceivers configured for (28 Gbps) NRZ or (56 Gbps) PAM4, and benefit from their low dark current and high reliability.
Edge-illuminated Monitor Photodiode (EMPD) Chips
Use these self-hermetic devices for channel monitoring anywhere across the 1270-1620 nm wavelength range with a typical responsivity of 0.8 A/W at 1310 nm.
100 Gbps and 200 Gbps EML
Optimal transmitter devices for optical transceivers employing 56 GBd and 112 GBd PAM4 modulation.
28 GBPS DFB Laser Diode Chips
Use these Fabry-Perot (FP) and distributed feedback (DFB) laser diode chips to build optical transceivers and other components needing a few mW of 13XX nm laser output.
100 Gbps PAM4 DFB Laser Diode Chips
Use these 13XX nm laser diode chips in high-speed uncooled transceivers based on NRZ or PAM4 (four-level) modulation, available at all four O-band CWDM wavelengths.
High-Power 100 mW DFB Laser Diode Chips
Get 100 mW of uncooled output power and 300 mW of output power when cooled, to enable 100 Gbps and 200 Gbps per lane, respectively, for cutting-edge O-band transceivers.